Abstract
A potentiometric method is proposed for the determination or boron in silicon, based on dissolution of silicon by treatment with hydrofluoric acid and ammonium fluoride in the presence of hydrogen peroxide, and conversion of boron to fluoroborate ion. The fluoroborate activity is measured with the Orion fluoroborate-selective electrode. Some important points, such as the effect of various interfering ions and the hydrolysis of fluoroborate ion, are described in detail. The method is applied to the determination of boron in silicon containing at least 10 p.p.m. of boron, with a relative standard deviation of ±4%.
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