Potential‐Induced Degradation in High‐Efficiency n‐Type Crystalline‐Silicon Photovoltaic Modules: A Literature Review

Abstract

n‐Type crystalline‐silicon (c‐Si) photovoltaic (PV) cell modules attract attention because of their potential for achieving high efficiencies. The market share of n‐type c‐Si PV modules is expected to increase considerably, with wide use in PV systems, including large‐scale PV systems, for which the system bias is set as markedly high. Such a high system bias leads to performance losses known as potential‐induced degradation (PID). By virtue of many researchers’ efforts, the PID behaviors, mechanisms, and preventive measures against PID have been well documented in conventional p‐type c‐Si modules. Researchers recently started to investigate PID in high‐efficiency c‐Si solar cells including n‐type c‐Si PV modules. Yet, the understanding of PID phenomena remains incomplete. Herein, a literature review of PID in high‐efficiency n‐type c‐Si PV modules is provided as a resource elucidating the current status of related research and remaining unresolved issues. This report mainly presents discussion of PID in several kinds of n‐type c‐Si PV modules in terms of materials science. PID phenomena are described as divided into some degradation modes. Details present a review of their respective degradation modes, degradation behaviors, proposed mechanisms, and potential measures against degradation. Remaining open issues and anticipated future studies are also summarized.