Abstract
This paper describes potential design and transport property of a 0.1-/spl mu/m n-MOSFET with asymmetric channel profile, which is formed by the tilt-angle ion-implantation after gate electrode formation. The relation between device performance and transport property of the asymmetric 0.1-/spl mu/m device is explored by Monte Carlo simulations, and measured electrical characteristics. The self-consistent Monte Carlo device simulation coupled with a process simulator reveals higher electron velocity at the source end of the channel and velocity overshoot at the source side of the channel, and the smaller high-energy tail of the distribution in the drain. This transport property creates high drain current, large transconductance, and low substrate current of the 0.1-/spl mu/m n-MOSFET with asymmetric channel profile.
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