Abstract
In atomically-thin two-dimensional (2D) semiconductors, the nonuniformity in current flow due to its edge states may alter and even dictate the charge transport properties of the entire device. However, the influence of the edge states on electrical transport in 2D materials has not been sufficiently explored to date. Here, we systematically quantify the edge state contribution to electrical transport in monolayer MoS2/WSe2 field-effect transistors, revealing that the charge transport at low temperature is dominated by the edge conduction with the nonlinear behavior. The metallic edge states are revealed by scanning probe microscopy, scanning Kelvin probe force microscopy and first-principle calculations. Further analyses demonstrate that the edge-state dominated nonlinear transport shows a universal power-law scaling relationship with both temperature and bias voltage, which can be well explained by the 1D Luttinger liquid theory. These findings demonstrate the Luttinger liquid behavior in 2D materials and offer important insights into designing 2D electronics.
Highlights
In atomically-thin two-dimensional (2D) semiconductors, the nonuniformity in current flow due to its edge states may alter and even dictate the charge transport properties of the entire device
Experimental investigations of the 2D edge states are scarce and little is known about the effects as well as the fundamental mechanism of edge states on electronic transport and performance of monolayer transition metal dichalcogenides (TMD)-based electronic devices, which are critical for evaluating their performance for future nanoelectronic devices
Scanning probe microscopy (SPM), scanning Kelvin probe force microscopy (SKPFM) and first-principle calculations reveal that the edge states dominate the charge transport and are responsible for this nonlinear behavior
Summary
In atomically-thin two-dimensional (2D) semiconductors, the nonuniformity in current flow due to its edge states may alter and even dictate the charge transport properties of the entire device. We systematically quantify the edge state contribution to electrical transport in monolayer MoS2/WSe2 field-effect transistors, revealing that the charge transport at low temperature is dominated by the edge conduction with the nonlinear behavior. Further analyses demonstrate that the edge-state dominated nonlinear transport shows a universal power-law scaling relationship with both temperature and bias voltage, which can be well explained by the 1D Luttinger liquid theory. These findings demonstrate the Luttinger liquid behavior in 2D materials and offer important insights into designing 2D electronics. Scanning probe microscopy (SPM), scanning Kelvin probe force microscopy (SKPFM) and first-principle calculations reveal that the edge states dominate the charge transport and are responsible for this nonlinear behavior. We further find that the current–voltage characteristics of charge transport show a powerlaw scaling with respect to both temperature and bias voltage, which is consistent with Luttinger liquid theory and suggests that the edge states are one-dimensional metal with dominant electron–electron interactions
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