Abstract
A compact ensemble of high density nitrogen-vacancy (NV) centers in diamond is essential to sense various external fields with a high precision at the nanoscale. Here, defects in type IIa and type Ib diamonds induced by 28 MeV electron irradiation at 77 K were studied by combining the positron annihilation spectroscopy and first-principles calculations. It is shown that the electron irradiation at 77 K can significantly enhance the NV center formation by directly converting 24% vacancies into the NV centers, indicating that it is an efficient way to produce the high density NV centers in the type Ib diamond.
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