Abstract
A very sensitive vacuum microbalance has been used to study the sputtering of germanium and silicon by argon ion bombardment. Current densities of 1 to 12 \ensuremath{\mu}a/${\mathrm{cm}}^{2}$ were used.The rates of sputtering of these materials were observed as a function of ion energy. A sputtering threshold energy of 46 ev was determined for germanium. The bombardment data are discussed in terms of the nature of the target surface. Oxidation data at 3 mm oxygen pressure are offered as evidence of the cleanliness of the bombarded surface. Approximately ${10}^{15}$ argon atoms/${\mathrm{cm}}^{2}$ were trapped or adsorbed by the target during the bombardment process.
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