Abstract
We have performed numerical simulations to demonstrate that the domain wall movement can be controlled introducing a distribution of magnetic impurities in a nanowire. In particular, we have considered two identical impurities equidistant from the nanowire width axis. Pinning and scattering sites for the domain wall can be defined by magnetic impurities, consisting of a local variation of the exchange constant. The domain wall motion was induced by application of a magnetic field pulse and our results indicate that it is possible to control the domain wall position.
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