Abstract
In this work, we describe the synthesis of porous Au structures by galvanic displacement reaction using porous Si as template material. Two metal ions were used as Au precursors: tetrachloroaurate(III) and bis(ethylenediamine)Au(III). Fluoride was employed to etch the Si oxides that form as a result of the displacement reaction. The porous Si layer employed as template displays an array of parallel cylindrical pores with diameters near 100 nm. The porous metal layer that forms with tetrachloroaurate(III) is an agglomerate of spherical particles with ca. 100 nm diameters. On the other hand, metallization with bis(ethylenediamine)Au(III) preserves the honeycomb morphology of the original porous Si layer.
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