Abstract
Dynamical behavior of localized biexcitons in Ga-rich AlxGa1−xN ternary alloys has been studied by means of time-resolved luminescence spectroscopy. The time-dependent luminescence was analyzed using rate equations which were modified by considering the localization times of both the biexcitons and single excitons individually. The localization times of both biexcitons and single excitons became longer with increasing aluminum composition. On the other hand, the formation time of biexcitons from single excitons remained nearly unchanged. This observation indicated that the formation rate of biexcitons in the ternary alloys was independent of the localization depth of single excitons.
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