Abstract
An ultralow temperature (150°C) polycrystalline silicon (poly-Si) film was successfully deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) and excimer laser annealing (ELA). The precursor active layer was deposited at a temperature of 150°C by ICP-CVD using an SiH4/He mixture. The deposited silicon film consisted of a crystalline Si component as well as a hydrogenated amorphous Si component. The hydrogen content in the precursor layer was less than 5 at %. After excimer laser irradiation, the grain size of the poly-silicon film was in the range 300 ∼ 500nm. Various characteristics and qualities of the poly-silicon film were verified.
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