Abstract
Perovskite-based light-emitting diodes (PeLEDs) are drawing great attention due to their remarkable performance and ease of processing. Nevertheless, a critical aspect is the perovskite film formation on top of solution-processed anodes such as poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS). Use of conventional PEDOT:PSS anodes gives rise to high leakage currents that mask the hole transport properties of the perovskite semiconductor. Here, we show a feasible approach to overcome this constraint by implementing a solution-processed, self-compensated, hole-doped triarylamine-fluorene copolymer (p-pTFF-C2F5SIS) with a work function of 5.85 eV as the anode for polymer–perovskite blend LED devices. Highly efficient hole injection was obtained, near that of evaporated MoOx. Hole-only devices reveal that the hole transport in the polymer–perovskite blend is trap-limited. PeLEDs with the ultrahigh-workfunction p-pTFF-C2F5SIS anode show much lower leakage and much better stability in current-voltage and light output characteristics than those with the PEDOT:PSSH anode.
Highlights
Metal halide perovskites have recently emerged as promising candidates for solution-processed optoelectronics, including solar cells, photodetectors, and light-emitting diodes (LEDs)
PEDOT:PSS has a work function (WF) close to 5.0 eV,15 which creates large hole injection barriers in LEDs based on perovskites that have considerably deeper valence band energies
We demonstrate the successful integration of a solutionprocessed polymeric hole injection layers (HILs) with a WF of 5.85 eV in quasi-twodimensional/three-dimensional (2D/3D) perovskite-polymer bulk heterostructure LEDs (PePoLEDs)
Summary
Metal halide perovskites have recently emerged as promising candidates for solution-processed optoelectronics, including solar cells, photodetectors, and light-emitting diodes (LEDs).1–3. A)Author to whom correspondence should be addressed: blom@mpip-mainz.mpg.de
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