Abstract
Polycrystalline films of ZnSe, pure and doped with Cu and Ga, have been deposited by a modified close-spaced-vapor-transport method which requires low temperatures (500 °C) and no subsequent annealing. The resulting grains are of the order of 1 μm. The films were characterized by their photoluminescence emission in the temperature range 10–290 K. The undoped and Cu-doped films display the usual Cu-green and Cu-red and near edge emission bands at low temperatures. In the Ga-doped films only a mildly temperature dependent band centered at ∼620 nm appears at all temperatures. The films have very similar characteristics to those prepared by more sophisticated techniques.
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