Abstract
Thin, large-grained polycrystalline Si (poly-Si) films can be formed on foreign substrates (e.g., glass) by the aluminum-induced layer exchange (ALILE) process, which is based on the aluminum-induced crystallization (AIC) of amorphous Si (a-Si). During an annealing step, below the eutectic temperature of the Al/Si system (577°C), the initial substrate/Al/a-Si stack is transformed into a substrate/poly-Si/Al(+Si) stack. In this chapter, the ALILE process itself and the properties of the resulting poly-Si films are discussed in detail from the scientific as well as technological point of view.
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