Abstract
We prepared thin polycrystalline silicon (poly-Si) films on glass by an aluminum-induced layer exchange (ALILE) process which is based on the aluminum-induced crystallization (AlC) of amorphous silicon (a-Si). During the ALILE process a glass/Al/a-Si stack is transformed into a glass/poly-Si/Al+Si structure. We investigated both the growth of the poly-Si layer and the final Al+Si layer on top of the poly-Si layer. Furthermore, we carried out the ALILE process on large glass substrates and on metal-coated glass substrates.
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