Abstract
The in-use adhesion characteristics of polycrystalline cubic silicon carbide (poly-SiC) films when used as a substrate material in MEMS applications are investigated using micromachined polycrystalline Si (poly-Si) cantilever beam arrays. The detachment lengths greater than 1500 μm are obtained, corresponding to an apparent work of adhesion of less than 0.006 mJ/m2. This is to be compared to the detachment lengths of less than 200 μm when poly-Si substrate is used, corresponding to the apparent work of adhesion of greater than 20 mJ/m2. To help understand the mechanism leading to the significant reduction in in-use adhesion, the poly-SiC surfaces are characterized by X-ray photoelectron spectroscopy, atomic force microscopy, and contact angle measurement. Based on the data, it is suggested that the topography as well as the slower oxidation rate of poly-SiC films may be responsible for the observed adhesion reduction.
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