Abstract
Poly(3-hexylthiophene) thin-film transistors with anodized high-dielectric constant (κ) tantalum pentoxide (Ta2O5) and spin-coated poly(4-vinylphenol) (PVP) film dual insulator layers were demonstrated. The polymeric PVP layer covering the Ta2O5 can considerably improve the transistor performance. The mobility was increased up to 3.07×10-2 cm2/(V·s), which is much higher than that obtained by only using a PVP or Ta2O5 single dielectric layer. The threshold voltage of the dual-insulator device was as low as 1.7 V, because the Ta2O5 insulator possesses a high-dielectric constant.
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