Abstract
We have studied, theoretically, the exciton luminescence of type II GaAs/AlAs superlattices in a magnetic field. If such superlattices are grown along z‖[001], the states, allowed in luminescence polarized along x'‖[110] or y'‖[1-0], are split due to the reduced symmetry from D 2d to C 2v. We have shown that in the magnetic field, parallel to x' or y', crossing of the energy levels of these states occurs. Near the level crossings the exciton luminescence becomes partially polarized, if the excitation is polarized along x‖[100] or y‖[010]. Far from the crossings, the luminescence is completely nonpolarized.
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