Abstract
Polarization resistances across Pt/YSZ and ITO/YSZ interfaces were probed on thin film structures with large surface area to volume ratio. High polarization resistance of Pt/YSZ interface responsible for the operating temperature of 873 K is suppressed in ITO/YSZ by atleast three orders of magnitude due to the partial solubility of an electronic conductor ITO in YSZ with the scope for reduction in temperatures to about 673 K. The conductivity of YSZ thin films measured in sandwiched configuration with Pt and ITO electrodes for the temperature interval of 673 – 973 K for multilayers configured as Pt|YSZ|Pt and ITO|YSZ|ITO were compared. Textured thin films of Pt, ITO and 8 mol% of Yttria stabilized zirconia (YSZ) exhibiting columnar growth were deposited on (100) SrTiO3.
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