Abstract
We measure the polarization of electron-hole exciton recombination in Si as a function of stress in the direction [001]. We find a polarization of the T.O. replica much larger than that of the T.A. replica. We interpret this effect as the result of interference betweeb the two recombination channels which use as intermediate states the conduction state Γ15c and the valence state Δ5V, this second channel being weakly allowed for T.A. phonons because of the proximity of the Δ5V state to the X4 state. Detailed comparison with the experimental curves allowes an estimate of the ratio of conduction and valence phonon matrix elements for T.A. and T.O. phonons.
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