Abstract
AbstractThe spin‐dependent tunneling of electrons through a two barrier semiconductor heterostructure with a semimagnetic layer was investigated. It was shown that the resonant level splitting in the semimagnetic well under an external magnetic field allows achieving a high level of spin polarization of the current flowing through the proposed spin filter. The dependence of the polarization depth on the parameters of the sample was calculated in the two component diffusion transport model. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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