Abstract
The linear polarization of the optical gain of closely stacked InAs∕InP (100) quantum dots (QDs) grown by metal-organic vapor-phase epitaxy with emission wavelength tuned into the 1.55μm region is controlled by the number of stacked QD layers and the injection current. Increasing the number of stacked QD layers to five rotates the linear polarization of the cleaved-side photoluminescence and QD ground state (GS) gain, determined from the amplified spontaneous emission (ASE) of a Fabry–Pérot ridge-waveguide laser, from transverse electric (TE) to transverse magnetic due to vertical electronic coupling. When the QD GS ASE and gain saturate with an increase of the injection current and the excited state ASE and gain become dominant, the linear polarization of ASE and gain changes back to TE. This limits the polarization insensitive operation of QD-based semiconductor optical amplifiers, however, opening routes to novel functionalities.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
