Abstract
Polarizability of Exciton in Surface Quantum Well
Highlights
Theoretical and experimental investigations of excitons in low dimensional semiconductor system have attracted extensive attention, due to their potential applications in opto-electronic devices such as light emitting and laser diodes with polarized output.[1]
We have performed a theoretical investigation of the effect of electric field on binding energy of exciton, Stark shift in exciton energy and polarizability of exciton in surface quantum wells (SQW) formed by vacuum/GaAs/GaxAl1-x Al as a function of well width and Al concentration considering the effect of image charges
It is found that lh and hh-exciton binding energy increase with increase in electric field
Summary
Theoretical and experimental investigations of excitons in low dimensional semiconductor system have attracted extensive attention, due to their potential applications in opto-electronic devices such as light emitting and laser diodes with polarized output.[1]. The response of exciton to the electric field in such confined systems has to be considered for the fabrication of spintronic and opto-electronic devices.[14,15] Monier et al determined the oscillator strength of excitons as a function of well width in InxGa1-xAs/GaAs quantum wells under large electric field.[16] The influence of uniform electric field on binding energy of excitons in inhomogeneous quantum dot is analysed by Khamkhami et al.[17] The Stark shift and ground state energy of exciton bound to ionised donor in Spherical quantum dots are determined as a function of electric field and dot radius.[18] Wu and Xia studied the effect of electric field on exciton polarizability and binding energy in CdSe/ZnS nanocrystal quantum dots using the diagonalisation method.[19] Feddi et al have determined the effect of electric field on polarizability of an exciton bound to an ionised donor in a spherical quantum dot by perturbative-variational method.[20]. The binding energies and polarizabilities of the excitons are calculated variationally as a function of well width as well as Al concentration for different strengths of electric field
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