Abstract

Polarizability of Exciton in Surface Quantum Well

Highlights

  • Theoretical and experimental investigations of excitons in low dimensional semiconductor system have attracted extensive attention, due to their potential applications in opto-electronic devices such as light emitting and laser diodes with polarized output.[1]

  • We have performed a theoretical investigation of the effect of electric field on binding energy of exciton, Stark shift in exciton energy and polarizability of exciton in surface quantum wells (SQW) formed by vacuum/GaAs/GaxAl1-x Al as a function of well width and Al concentration considering the effect of image charges

  • It is found that lh and hh-exciton binding energy increase with increase in electric field

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Summary

INTRODUCTION

Theoretical and experimental investigations of excitons in low dimensional semiconductor system have attracted extensive attention, due to their potential applications in opto-electronic devices such as light emitting and laser diodes with polarized output.[1]. The response of exciton to the electric field in such confined systems has to be considered for the fabrication of spintronic and opto-electronic devices.[14,15] Monier et al determined the oscillator strength of excitons as a function of well width in InxGa1-xAs/GaAs quantum wells under large electric field.[16] The influence of uniform electric field on binding energy of excitons in inhomogeneous quantum dot is analysed by Khamkhami et al.[17] The Stark shift and ground state energy of exciton bound to ionised donor in Spherical quantum dots are determined as a function of electric field and dot radius.[18] Wu and Xia studied the effect of electric field on exciton polarizability and binding energy in CdSe/ZnS nanocrystal quantum dots using the diagonalisation method.[19] Feddi et al have determined the effect of electric field on polarizability of an exciton bound to an ionised donor in a spherical quantum dot by perturbative-variational method.[20]. The binding energies and polarizabilities of the excitons are calculated variationally as a function of well width as well as Al concentration for different strengths of electric field

Well State and Ground State of Excitons
Effect of Electric Field
RESULTS AND DISCUSSION
CONCLUSION

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