Abstract
With the use of the multivalley effective-mass equation with an envelope function containing a sum of many exponentials and the Hass\'e variational approach, an expression for the polarizabilities of shallow donors in a multivalley semiconductor is obtained. The polarizabilities of isolated P, As, and Sb donors in Si are computed with a two-exponential envelope function and are compared with the polarizability values of isolated P and Sb in Si deduced from recent piezocapacitance measurements.
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