Abstract
Resistive switching (RS) devices are commonly believed as a promising candidate for next generation nonvolatile resistance random access memory. Here, polymethylmethacrylate (PMMA) interlayer was introduced at the heterointerface of p-CuSCN hollow nanopyramid arrays and n-ZnO nanorod arrays, resulting in a typical bipolar RS behavior. We propose the mechanism of nanostructure trap-induced space charge polarization modulated by PMMA interlayer. At low reverse bias, PMMA insulator can block charges through the heterointerface, and and trapped states are respectively created on both sides of PMMA, resulting in a high resistance state (HRS) due to wider depletion region. At high reverse bias, however, electrons and holes can cross PMMA interlayer by Fowler-Nordeim tunneling due to a massive tilt of energy band, and then inject into the traps of ZnO and CuSCN, respectively. and trapped states are created, resulting in the formation of degenerate semiconductors on both sides of PMMA. Therefore, quantum tunneling and space charge polarization lead to a low resistance state (LRS). At relatively high forward bias, subsequently, the trapped states of and are recreated due to the opposite injection of charges, resulting in a recovery of HRS. The introduction of insulating interlayer at heterointerface, point a way to develop next-generation nonvolatile memories.
Highlights
Resistive switching (RS) devices are commonly believed as a promising candidate for generation nonvolatile resistance random access memory
Besides indium tin oxide (ITO) diffraction peaks, originating from the substrate, other reflection peaks can be indexed to a rhombohedral structure β − CuSCN, which is in good agreement with the report data for CuSCN (JCPDS Card File No 00–029–0581)
From the cross-sectional and top-sectional view SEM images, respectively shown in the Fig. 1b,c, it can be obviously seen that the electrodeposited CuSCN film is uniform with a thickness of approximately 2 μ m, and the grains grow in regular hollow pyramid shape with the size of about 400 nm
Summary
Resistive switching (RS) devices are commonly believed as a promising candidate for generation nonvolatile resistance random access memory. The prospect of promising applications of nonvolatile memory devices utilizing hybrid inorganic/ organic composites containing inorganic nanostructures has became a promising type of RS device Such nanomaterials have large surface and interface area, and they can provide effectively trapping and hopping sites for charge transport and act as reservoir and supplier of defects, resulting in a dramatic change in the physical properties. It is studied numerously for its potential application in nonvolatile memory devices, such as low production cost, printability, simple fabrication and good scalability, and the metal oxide based heterojunctions can be prepared on various types of substrates, providing flexible processing options[11,12,13,14,15]. It is expected to form p-n heterojunction diode when n-type ZnO nanorods directly contact with p-type CuSCN films[38,39,40]
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