Abstract
We propose a double-aperture structure to enhance the optical near-field in metal nanoaperture vertical-cavity surface-emitting lasers (VCSELs). We fabricated 850 nm GaAs VCSELs with subwavelength-sized double metal apertures closed to each other. The optical near-field localized in the metal apertures is strongly enhanced by the excitation of localized plasmon around the metal apertures. The far-field power radiated from the apertures is enhanced to be 16 times larger than that from a single aperture VCSEL. The peak power density is as large as 2.5 mW/μm2 with a spot size of 260 nm. The obtained power density is even larger than that of a conventional single-mode VCSEL without nanoapertures, which is very encouraging for use in high-density data storages.
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