Plasmon-Driven Hot Electron Transfer at Atomically Sharp Metal-Semiconductor Nanojunctions.

Abstract

Recent advances in guiding and localizing light at the nanoscale exposed the enormous potential of ultrascaled plasmonic devices. In this context, the decay of surface plasmons to hot carriers triggers a variety of applications in boosting the efficiency of energy-harvesting, photocatalysis, and photodetection. However, a detailed understanding of plasmonic hot carrier generation and, particularly, the transfer at metal–semiconductor interfaces is still elusive. In this paper, we introduce a monolithic metal–semiconductor (Al–Ge) heterostructure device, providing a platform to examine surface plasmon decay and hot electron transfer at an atomically sharp Schottky nanojunction. The gated metal–semiconductor heterojunction device features electrostatic control of the Schottky barrier height at the Al–Ge interface, enabling hot electron filtering. The ability of momentum matching and to control the energy distribution of plasmon-driven hot electron injection is demonstrated by controlling the interband electron transfer in Ge, leading to negative differential resistance.