Abstract
Plasma-based ion implantation (PBII) is applied as a sterilization technique for three-dimensional work pieces. In the sterilization process, a pulsed negative high voltage (5μs pulse width, 300pulses∕s,−800V to −13kV) is applied to the electrode (workpiece) under N2 at a gas pressure of 2.4 Pa. The resultant self-ignited plasma is shown to successfully reduce the number of active Bacillus pumilus cells by 105 times after 5 min of processing. The nitrogen ion energy is estimated using a simple method based on secondary ion mass spectroscopy analysis of the vertical distribution of nitrogen in PBII-treated Si.
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More From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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