Abstract
Silicon nitride films are deposited by plasma polymerization of 1,1,3,3,5,5 hexamethylcyclotrisilazane and NH 3. The use of low monomer flow rates results in a significant reduction in film carbon content. Chemical and electrical properties are studied as a function of plasma parameters. Dielectric properties of films produced at moderate temperatures and r.f. power levels are similar to those of silicon nitride deposited from SiH 4 and NH 3. Films produced under plasma conditions that lead to carbon incorporation oxidize extensively in air and show poor dielectric performance.
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