Plasma diagnostic approach for high rate nanocrystalline Si synthesis in RF/UHF hybrid plasmas using a PECVD process

Abstract

Hydrogenated nanocrystalline silicon (nc-Si : H) films intended for efficient nc-Si : H solar cells are usually made at the transition to the nanocrystalline regime using the plasma-enhanced chemical vapor deposition (PECVD) process. This change occurs within a sensitive process window and is affected by various deposition parameters. This paper reports a study of nc-Si : H films' fabrication by utilizing systematic plasma diagnostics. This work presents a novel approach for plasma processing using radio frequency (RF), ultra high frequency (UHF) and RF/UHF hybrid plasmas. Using careful analysis, efforts are made to investigate the radicals and plasma formation by changing the operating source power and silane (SiH4) concentration. The aim of this work is also to investigate the PECVD process and conditions favorable for the synthesis of nc-Si : H film. For the present study, we systematically use the optical emission spectroscopy (OES), normal, and RF-compensated Langmuir probe (LP) and vacuum ultraviolet absorption spectroscopy diagnostics. Measurements reveal that the OES diagnostic is consistent with the LP measurements. Investigation reveals that UHF power in addition to RF enables higher dissociation of H or SiH radicals and the production of higher plasma density. The combined effect of both RF and UHF sources is used as the hybrid plasma source. Measurements also reveal that inbetween SiH4 flow rates ∼20–30 sccm, there is significant change in the plasma characteristics that denotes the nc-Si : H−a-Si : H transition region. An atomic hydrogen density (nH) in the range ≈(8 − 10) × 1011 cm−3 and plasma density n0 ≈ (2 − 3) × 1011 cm−3 with a silane to hydrogen ratio of 1–2% with high crystallinity has been obtained. Along with the discussion on the effect of frequency on plasma chemistry, this explains the RF power coupling and the role of electrons and ions in plasmas with increasing frequency.