Abstract
ABSTRACTPlasma-assisted chemical vapor deposition uses energetic electrons to decompose reactant gas molecules into more simple and more highly reactant species to achieve deposition of amorphous and crystalline films and coatings at reduced temperatures. The basis of this technique, as well as the deposition conditions and properties of several ceramic films including Al2O3, TiO2, ZnO, AN, BN, TiN, SiC, Si, GaAs, SiC, C (diamond) and GaN, are briefly described. Modifications of the classical immersed method, including remote plasmas, the use of microwave frequencies and electron cyclotron resonance techniques, are also described with material examples.
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