Abstract
Films of AlN and ZnO were prepared by planar magnetron sputtering with obliquely facing targets, where the two targets were inclined to each other at an angle 2 Φ. Systems with Φ=15° and 40° were tried. For ZnO films, increasing Φ to 40° had an adverse effect on the film growth as compared with that in the system with Φ= 15°, It is necessary to limit the angle of inclination in order to avoid direct film bombardment by energetic O − ions and O atoms. In AlN film preparation in the system with Φ = 40° the c axis orientation the AlN film was degraded. The results obtained suggest that the degradation mechanism may not be the same as that in ZnO film preparation.
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