Abstract
The defect-related levels of n-type CdS/p-type SnS layers with thermal annealing were investigated through photoluminescence (PL) measurement. The SnS layer exhibited PL band at 1.13 eV. Based on the PL spectra observed at various excitation intensities and temperatures, PL peaks were attributed to donor to valence band transitions. Activation energy of donors in SnS was estimated to be 46 meV. The donor corresponding to the activation energy was due to interstitial Cadmium (Cdi). Based on these data, a schematic diagram of several defects was created for post-annealed CdS/SnS.
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