Abstract
A double-lateral-gate p-type junctionless transistor is fabricated on a low-doped (1015) silicon-on-insulator wafer by a lithography technique based on scanning probe microscopy and two steps of wet chemical etching. The experimental transfer characteristics are obtained and compared with the numerical characteristics of the device. The simulation results are used to investigate the pinch-off mechanism, from the flat band to the off state. The study is based on the variation of the carrier density and the electric-field components. The device is a pinch-off transistor, which is normally in the on state and is driven into the off state by the application of a positive gate voltage. We demonstrate that the depletion starts from the bottom corner of the channel facing the gates and expands toward the center and top of the channel. Redistribution of the carriers due to the electric field emanating from the gates creates an electric field perpendicular to the current, toward the bottom of the channel, which provides the electrostatic squeezing of the current.
Highlights
The fabrication of transistors without junctions and a doping concentration gradient has been introduced recently as a potential way to overcome the major obstacles in ultrascaled transistors [1,2]
An overall good agreement is found between measurement and simulation results
We have presented fabrication of p-type double-lateral-gate junctionless transistors (DGJLT) using an unconventional method of scanning probe lithography and a numerical study of the same structures using 3-D TCAD simulation results
Summary
The fabrication of transistors without junctions and a doping concentration gradient has been introduced recently as a potential way to overcome the major obstacles in ultrascaled transistors [1,2]. The idea behind the JLTs, or pinch-off transistors [6], is to simplify the source/drain engineering by removing the conventional junctions, and at the same time, facilitating the scaling of the transistors. The structures of proposed JLTs utilize a thin channel with homogeneous doping polarity and high doping concentration across the source/drain and the channel. High doping concentration can provide a higher value of current for such a thin channel, but at the same time causes an unavoidable scattering effect and subthreshold swing (SS) fluctuation. The latter case can justify new experiments with low doping concentration for JLTs
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