Abstract
An empirical tight-binding model with an orthogonal sp 3 set of orbitals, interactions up to second neighbor and spin-orbit coupling, is used to describe the electronic and optical properties of bulk as well as strained GaAs and InP. The band structure and the dielectric functions of bulk GaAs and InP are calculated and found to be in good agreement with experimental results. The deformation potentials for the E 1 and E 1 + Δ 1 transitions, for uniaxial strain along the [001] and [111] directions, are evaluated. Also the piezooptical tensor components P 11 , P 12 , P 44 , as well as the differential reflectivity were calculated. Finally the refractive index as a function of energy is calculated for hydrostatic pressures in the range of 0 to 8 GPa. The theoretically obtained results are in good agreement with existing experimental data.
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