Abstract
The piezoelectric response of 1.2-µm-thick Bi4-xPrxTi3O12 (BPT, x=0.3, 0.5, 0.7) ferroelectric films with polar-axis orientation is reported. Utilizing a long-range lattice-matching character, BPT films were grown by chemical solution deposition (CSD) on (101)-oriented IrO2 layers which were formed by the oxidation of Ir bottom layers during solution depositions. An effective piezoelectric coefficient d33=36 pm/V comparable to that of Bi4Ti3O12 (BIT) single crystal was measured in BPT thick films with x=0.3. Related to the decrease in Ps, the total strain εtotal decreased with increasing x. Stripe-shaped domain structures of ∼20 nm in width were observed in some grains in BPT thick films by piezoresponse force microscopy (PFM) and transmission electron microscopy (TEM). These structures could be attributed to 90° domain walls. The reconfiguration of these domains by the elecric field may occur to contribute to the ferroelectric polarizations resulting in a large value of Psat=50 µC/cm2 in BPT thick films with x=0.3.
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