Abstract
AbstractThe piezo‐Hall effect has been measured at room temperature in germanium specimens doped with ≈︁1015 and ≈︁1018 Sb atoms per cm3. An experimental arrangement was used in which the stress and magnetic field were along a 〈111〉 valley symmetry direction and the current and Hall probes in the normal plane. The experimental results for ≈︁1018 cm−3 material are in accord with the simple electron transfer model with a mobility anisotropy of 7. The ≈︁1015 cm−3 material shows an anomalously small variation of Hall coefficient with stress. Possible explanations in terms of constancy of the net carrier concentration and intervalley scattering are discussed and rejected.
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