Abstract
The technique of picosecond transient resonant anti-Stokes (AS) Raman scattering has been applied to polyacetylene thin films for studying electronic photoexcitation and phonon dynamics. We observed a transient photoinduced increase in the AS scattering intensity for the CC stretching mode at 1088 cm −1. This enhancement is assigned to a nonequilibrium phonon population, which is generated by the formation, thermalization and geminate recombination of the photoexcited charged solitons. From the decay of the nonequilibrium CC stretching mode population, we determined its lifetime to be 5.5 ± 0.5 ps. We also found a much longer none-quilibrium phonon relaxation process, which does not exist in conventional semiconductors.
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