Abstract
The multilevel switching of conductive bridge resistive memory is characterized by the ON-state resistance (RON) being inversely proportional to the compliance current (ICC). The constant of this relation is shown to be universally correlated to the minimum SET voltage (VSET(min)) for all conductive bridge devices. VSET(min), required to switch the memory from high resistance state to low resistance state, can be extracted using small voltage sweep rates. The correlation has been verified by experiments on Cu/TaOx/Pt devices and confirmed for data on resistive devices reported in the literature. The physical domain of validity for the RON–ICC relation has been established.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
