Physical properties of nanometer graphene oxide films partially and fully reduced by annealing in ultra-high vacuum

Abstract

The properties of reduced graphene oxide (GO) are reported from a non-chemical reduction method. Ultra-high vacuum annealing of GO films in the thickness of 1–80 nm was studied by XPS, AFM, UV-Vis-NIR, Raman, and TEM to observe the controlled removal of oxygen. We observed the loss of hydroxyl (C-OH) at low temperatures (<600 °C) followed by the complete loss of carbonyls (C = O) and epoxy (C-O-C) species by 1200 °C. As oxygen was removed, we observed a decrease in the layer spacing between the GO sheets and a concurrent decrease in the film resistance. While the Raman spectroscopy showed no change with reduction, indicating no change in the overall defect density or the general structure of the GO, the transmission spectra showed a shift in the transmission minimum from 245 nm to 260 nm, and a total decrease in transmission above 800 nm occurs as the films visibly darken. TEM indicated that there is turbostratic stacking of the graphene layers as the reduction occurs, leading us to conclude that at a certain threshold of reduction the film properties are similar to epitaxial graphene growth on the C-face of SiC, but that a reduction gone too far results in a layer spacing equivalent to graphite.