Abstract
Electrodeposited thin film CdS has been modified by codeposition and by postdeposition thermal and solution treatments. The effects of these treatments on band gap, flatband potential, minority carrier diffusion length, photocurrent/photovoltage characteristics and conductivity activation energy were determined. The results are discussed in terms of a model developed by Seto and Baccarani et al. for conductivity in polycrystalline semiconductors, which considers barrier formation caused by grain boundary states. In addition the effect on bulk subband-gap states and dopant density are also discussed.
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