Abstract
The physical origin of the flatband voltage (VFB) roll off for a metal–oxide–semiconductor device with high-k/metal gate structure is studied from the viewpoint of energy band alignment at the high-k/Si interface because the thickness of SiO2 interlayer is thin enough to be ignored. The VFB roll off phenomenon is assigned to associate with the direct electron transfer between high-k and Si substrate. Quantitatively calculated simulation results based on this model are given considering different conditions.
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