Abstract
Two-dimensional (2D) semiconductor materials with discrete bandgap become important because of their interesting physical properties and potentials toward future nanoscale electronics. Semiconductor p-n junctions are essential building blocks for electronic and optoelectronics devices. Conventional lateral p-n heterojunction diode had several problems. Lateral p-n diode has quasi neural region so it’s efficiency is lower than vertical p-n diode. Here we fabricated vertical structure 2D dichalcogenide-based p-n heterojunction diode circuits for Photovoltaic-induced switching applications using p-WSe2 and n-MoS2 nanosheets. Moreover we modulate the thickness of flakes for enhancing the device performance. Our p-n diode PV cell displayed an instantaneous voltage of 0.3 V as Voc due to the difference between conduction and of MoS2 and valence band of WSe2. Furthermore based on such PV effects we successfully demonstrated PV optical switching, logic gating, and finally the gate switching of an IGZO field effect transistor. Figure 1
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