Abstract
p-n tunnel junctions made by alloying and MIS tunnel junctions made by contacting the metal were fabricated using degenerate n-type GaAs substrates. The conductance G and capacitance C of these diodes have large sensitivity to light irradiation and show similar spectra with respect to photon energy. The relative variation of photoconductance with initial dark conductance, ΔG/Gd, is more than ten times that of the photocapacitance, ΔC/Cd. It was found that the quenching light effect is observed in p-n tunnel junctions but not in MIS tunnel junctions. These phenomena are explained by considering the change of trapped charge in the deep level due to illumination which induces a change of the depletion layer structure and the tunneling probability, resulting in the changes of C and G (phototunnel conductance). The experimental results have been shown to agree well with theoretical calculations.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
