Abstract
Photothermal radiometry (PTR) signals obtained with a highly focused laser beam were used to obtain three-dimensional PTR amplitude and phase thermoelectronic images of a GaSb wafer doped with Te. The thermoelectronic images were carried out at 10 kHz, corresponding to an optimal difference in phase and amplitude signals. The results indicate that the concentration of Tellurium (Te) is non homogeneous over the full wafer because the thermoelectronic image shows high plasma componens at the ends sides of the wafer; microRaman spectroscopy was used to characterize Te presence along the sample. At the center of the wafer μ-Raman spectra show a decrease in the GaSb signal that could be related with changes in the crystalline quality, non evidence of Te-Te bonds was found.
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