Abstract
We investigated the chemical mechanical polishing (CMP) characteristics of photoresist for the first time. It was found that photoresist polishing rates are strongly dependent on photoresist baking temperature. The photoresist polishing rate exceeded 7000 nm/min, which is 87 times higher than the value for SiO2, after baking at 170°C, but matched that of SiO2 after baking at 220°C at a polishing pressure of 230 g/cm2. The photoresist polishing rate after baking at 240°C was lower than that of SiO2. Using these photoresist CMP characteristics, a simple shallow trench isolation (STI) process was achieved.
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