Abstract
Photoreflectance (PR) spectroscopy and capacitance-voltage (C-V) measurements are used to characterize the surface damage caused by BCl3/Ar plasma in barrier layer of GaInP/GaInAs/GaAs pseudomorphic high electron mobility transistors (PHEMT). When the BCl3/Ar flow ratio is either lower or higher than 6:4, PR spectra indicate plasma causes damage such as nonradiative recombination centers, scattering centers and strain which lead to decreased signal intensity, broadened linewidth, and the spectral shift, respectively. The plasma-induced surface damage also results in a positive voltage shift of the C-V curve. By using a BCl3/Ar mixed gas, the positive voltage shift of the C-V curve is less than that of samples with pure BCl3. Both PR and C-V measurements are in good agreement. These results show that photoreflectance spectroscopy is a powerful, nondestructive tool for investigating surface damage and can be used to improve the performance of PHEMTs.
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