Abstract
Thermal diffusivity of the sintered semiconductors was measured by the photopyroelectric (PPE) method. The measurement based on the phase-modulation frequency characteristics was shown to give superior results, eliminating errors expected in the conventional signal amplitude-distance characteristics measurements. Thermal diffusivities of the melt-grown and hot-pressed samples were found to be αmelt(c⊥) = 0.014 cm2/s, αmelt(c//) = 0.011 cm2/s, αhot(c⊥) = 0.012 cm2/s, and αhot(c//) = 0.008 cm2/s, depending on the relation between the c-axis direction of grain and thermal flow direction. The thermal diffusivity of the hot-pressed samples shows a strong dependence on the hot-press pressure through the orientation factor.
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