Abstract
A potential mechanism for high-temperature integration of a recently developed GaAs-based optically triggered power transistor (OTPT) to a SiC DMOSFET for photonic control of power flow is outlined and experimentally demonstrated over a range of switching frequencies and duty cycles. It was found that the switching dynamics of the SiC DMOSFET varies with the case temperature due to a change in the conductance of the GaAs OTPT. This temperature-induced drift in the rise time of the SiC DMOSFET is compensated by a nonlinear variation in the intensity of the triggering signal of the OTPT.
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