Photon Upconversion in a Vapor Deposited 2D Inorganic-Organic Semiconductor Heterostructure.

Abstract

Energy transfer processes may be engineered in van der Waals heterostructures by taking advantage of the atomically abrupt, Å-scale, and topologically tailorable interfaces within them. Here, we prepare heterostructures comprised of 2D WSe2 monolayers interfaced with dibenzotetraphenylperiflanthene (DBP)-doped rubrene, an organic semiconductor capable of triplet fusion. We fabricate these heterostructures entirely through vapor deposition methods. Time-resolved and steady-state photoluminescence measurements reveal rapid subnanosecond quenching of WSe2 emission by rubrene and fluorescence from guest DBP molecules at 612 nm (λexc = 730 nm), thus providing clear evidence of photon upconversion. The dependence of the upconversion emission on excitation intensity is consistent with a triplet fusion mechanism, and maximum efficiency (linear regime) of this process occurs at threshold intensities as low as 110 mW/cm2, which is comparable to the integrated solar irradiance. This study highlights the potential for advanced optoelectronic applications employing vdWHs which leverage strongly bound excitons in monolayer TMDs and organic semiconductors.