Abstract
Firstly a brief mention is made of the rationale behind the development of silicon Schottky barrier solar cells (SBSCs) for terrestrial photovoltaic solar energy conversion and the consequent requirement for their stability.For aluminium-thin oxide-p-type silicon SBSCs we describe a variety of photon-induced degradation effects which we observed. The effects on the illuminated and the dark current-voltage characteristics arise from changes in the interface region. Sputter Auger measurements on multilayer structures similarly produced suggest that the effects are perhaps associated with chemical bonding changes and atomic migration in the aluminium and thin oxide layers.
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